Quantum Semiconductor has received funding from the Defense Advanced Research Projects Agency (DARPA), the National Science Foundation (NSF), the Office of Naval Research (ONR), and the Naval Air Systems Command (NAVAIR). Here's a list of our current and completed contracts:
May 2, 2019 – Nov 11, 2019
“Improved Quantum Efficiency Photo-Detector” consisting of determining the circuitry needed for optimizing the performance of a sensing array made of SiGeC Photo-Diodes having large internal gain of photo-current, without gain of dark-current, for a LIDAR system.
Jan 15, 2019 - Dec 31, 2020
“Development of High Gain SiGeC CMOS Imaging Arrays for Visible Sensing”, consisting of semiconductor device modeling and testing of SiGeC Photo-Diodes having large internal gain of photo-current, without gain of dark-current.
Nov 22, 2016 - Aug 21, 2017
“Near-Photon-Counting, High Dynamic Range, Passive Detector Arrays”, in which the circuitry was simulated for a 1 Mega-Pixel CMOS Image Sensor with pixels comprising a Si-Ge-C superlattice for operation in the 1.55µm wavelength region.
Oct 1, 2015 – Sep 30, 2019
“Development of CMOS-Based APD Arrays with Si-Ge-C Materials”, consisting of the fabrication of CMOS Pixel arrays with epitaxial SiGeC random alloy films having large internal gain of photo-current, without gain of dark-current, using a commercial SiGeC BiCMOS process fabricated on 8-inch wafers.
May 2013 - Jun 2014
SiGeC Superlattices with Direct Bandgaps for Light Emission and Absorption at 1.55 Micron”, in which ab-initio simulations of Si-Ge-C superlattices revealed multiple compositions with direct bandgaps across the infra-red range.
2008 - 2009
“New SiGeC Avalanche Photo-Diodes Integrated with CMOS”, in which fabrication of an image sensor test chip was sponsored by the NSA through the Trusted Foundry Access Program using the IBM 7HP SiGe BiCMOS Process.